MPCVD Diamond CVD-MPCVD enables high quality diamond single crystal and polycrystalline thin film growth for core 4th generation wide bandwidth semiconductor device manufacturing.|YUNMAO

MPCVD Diamond CVD

Yunmao Product Overview

MPCVD enables high quality diamond single crystal and polycrystalline thin film growth for core 4th generation wide bandwidth semiconductor device manufacturing.

Yunmao Technical Advantages

Capable of fully automated and automated production

Innovative design for high production yields

Innovative high uniformity, biased design for higher diamond coating quality

Industry standard safety interlocks, alarms, EMO

Products category

For Industry

ALD

Plasma Batch ALD

PBATCH Batch PEALD

Thermal Batch ALD

CBATCH 100s Batch Thermal ALD CBATCH 300s Batch Thermal ALD

CVD

MPCVD Diamond CVD

Epitaxy

SICE-Y8 SiC Epitaxy CVD System

Powder ALD/CVD

KG Powder ALD for Mass Production

SCA Powder CVD for Mass Production

For R&D

ALD

Single Wafer ALD

QBT-A
High Vacuum Plasma-enhanced ALD System MINI R&D Desktop ALD

Sputter

Single-Cathode Vertical Sputtering

QBT-P
Dual-chamber Ultra-high Vacuum Magnetron Sputtering System PVD-100
Dual-chamber High Vacuum Magnetron Sputtering System QBT-P L3
Triple-chamber Ultra-high Vacuum Magnetron Sputtering System(α-Ta、Nb-Ta)

Multi-Cathode Vertical Sputtering

QBT-MPV
Multi-target Ultra-high Vacuum Magnetron Vertical Sputtering System

Multi-Cathode Co-Sputtering

QBT-MPC
Multi-target Ultra-high Vacuum Magnetron Co-Sputtering System

MP L Customized Series

QBT-MP·L3
Multi-chamber Ultra-high Vacuum Magnetron Sputtering System

Evaporator

QBT-I Dual-chamber High-speed Evaporator

QBT-J Four-chamber Ultra-high Vacuum GLAD System

QBT-E Dual-chamber Ultra-high Vacuum Electron Beam Evaporator

Powder ALD

GM R&D Powder ALD

QBT-T Dual-chamber Plasma-enhanced Wafer and Powder ALD System

Application

Heating Sinking Chip

Fourth Generation High Power Semiconductor

Jewellery Manufacturing

Related products

SICE-Y8 SiC Epitaxy CVD System

The SICE-Y6/8 is designed for SiC epitaxial growth on 6- and 8-inch wafers, supporting both P-type and N-type doping. The reaction chamber features a horizontal hot-wall design with five integrated gas inlets and multi-zone gas mixing technology, enabling stable and uniform flow fields. Induction coil heating ensures homogeneous temperature distribution, delivering superior process performance.

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QBT-P Dual-chamber Ultra-high Vacuum Magnetron Sputtering System

QBT-MP·L3 Multi-chamber Ultra-high Vacuum Magnetron Sputtering System

CBATCH 100s Batch Thermal ALD

GM R&D Powder ALD

PVD-100 Dual-chamber High Vacuum Magnetron Sputtering System

QBT-P L3 Triple-chamber Ultra-high Vacuum Magnetron Sputtering System(α-Ta、Nb-Ta)

QBT-MPV Multi-target Ultra-high Vacuum Magnetron Vertical Sputtering System

QBT-MPC Multi-target Ultra-high Vacuum Magnetron Co-Sputtering System

QBT-I Dual-chamber High-speed Evaporator

KG Powder ALD for Mass Production

SCA Powder CVD for Mass Production

QBT-A High Vacuum Plasma-enhanced ALD System

QBT-J Four-chamber Ultra-high Vacuum GLAD System

QBT-E Dual-chamber Ultra-high Vacuum Electron Beam Evaporator

PBATCH Batch PEALD

SICE-Y8 SiC Epitaxy CVD System

QBT-T Dual-chamber Plasma-enhanced Wafer and Powder ALD System

MINI R&D Desktop ALD

CBATCH 300s Batch Thermal ALD

MPCVD Diamond CVD

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