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Semiconductor

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SiC epitaxial CVD, diamond MPCVD, and PECVD serve the third-generation, fourth-generation , and silicon-based integrated circuit semiconductor markets. Yunmao has established technological barriers in key process module innovation, reaction chamber flow field design and in-situ monitoring systems, which deliver exceptional performance and stability for high-frequency devices, power electronics, MEMS sensors and Memory chips. Yunmao strengthens strategic collaborations with industry leaders, accelerating the industrialization of next-gen semiconductor materials and devices through customized equipment solutions.

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Related products

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QBT-P Dual-chamber Ultra-high Vacuum Magnetron Sputtering System

QBT-P enables high-quality thin-film deposition and can grow high-purity α-phase tantalum films at both high and room temperatures. It deposited α-Ta films exhibit superior superconducting properties with Tc > 4.25 K and residual resistance ratio > 6, enabling low-loss quantum circuits that achieve single-photon Q > 10⁶ and qubit coherence times exceeding 250 μs.

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QBT-J Four-chamber Ultra-high Vacuum GLAD System

The system employs linear cascade technology, integrating four chambers for load-lock (pre-treatment) chamber, ion milling chamber, evaporator, oxidation chamber. The fully automated system features simple operation and easy maintenance, utilizing a pick-and-place transfer mechanism to minimize particulate generation. With QBT-J, customers can develop high-quality superconducting devices with broad application prospects across multiple fields.

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SICE-Y8 SiC Epitaxy CVD System

The SICE-Y6/8 is designed for SiC epitaxial growth on 6- and 8-inch wafers, supporting both P-type and N-type doping. The reaction chamber features a horizontal hot-wall design with five integrated gas inlets and multi-zone gas mixing technology, enabling stable and uniform flow fields. Induction coil heating ensures homogeneous temperature distribution, delivering superior process performance.

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QBT-MPV Multi-target Ultra-high Vacuum Magnetron Vertical Sputtering System

QBT-MPV is an upgraded system from QBT-P. Compared to QBT-P, QBT-MPV includes up to 4 magnetron cathodes (upon request) in one sputtering chamber, enabling multi-layer process, such as Nb/Al-AlOx/Nb, Al/AlOx/Al, or even α-Ta/TaOx/α-Ta junctions. The system is also compatible with seed layer based process.

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