SICE-Y8 SiC Epitaxy CVD System
The SICE-Y6/8 is designed for SiC epitaxial growth on 6- and 8-inch wafers, supporting both P-type and N-type doping. The reaction chamber features a horizontal hot-wall design with five integrated gas inlets and multi-zone gas mixing technology, enabling stable and uniform flow fields. Induction coil heating ensures homogeneous temperature distribution, delivering superior process performance.
